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GaN Basics: FAQs Electronic Design
TCAD simulated probability of ionization (Ft,A,j) with the traps
Energies, Free Full-Text
Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
Multibias TCAD Analysis of Trap Dynamics in GaN HEMTs
Method of evaluating interface traps in Al2O3/AlGaN/ GaN high electron mobility transistors
Electronics, Free Full-Text
Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications - De Santi - 2018 - IET Power Electronics - Wiley Online Library
Multibias TCAD Analysis of Trap Dynamics in GaN HEMTs